ACADSTAFF UGM
| Title | : | Biaxial strain effects on the electronic properties of silicene: the density-functional-theory-based calculations |
| Author | : |
KHAERUL UMAM (1) Prof. Sholihun, S.Si., M.Sc., Ph.D.Sc. (2) Prof. Drs. Pekik Nurwantoro, M.S., Ph.D. (3) Moh. Adhib Ulil Absor, S.Si., M.Sc., Ph.D. (4) Dr.Sc. Ari Dwi Nugraheni, S.Si., M.Si. (5) Romy Hanang Setya Budhi, S.Si., M,Sc., Ph.D. (6) |
| Date | : | 0 2018 |
| Keyword | : | Silicene,buckled structure, biaxial strain Silicene,buckled structure, biaxial strain |
| Abstract | : | The effects of biaxial strain on the electronic properties of silicene are studied by carrying out the density-functional-theory (DFT) calculations. We simulate planar and buckled structures and find that the buckled structure is more stable than the planar one. We next apply biaxial strain up to 12% and find that the applied tensile and compressive strains below 8% do not change the electronic structure. At tensile strains of 8% or more, the Dirac point at K-point shifts up from the Fermi level, indicating that such tensile strain behaves as p-type doping. Meanwhile at the compressive strains of 8% or more, the Dirac point at K-point shifts down from the Fermi level, indicating that the such compressive strain behaves as n-type doping. We find that silicene remains stable for the applied strain up to 12%. We also calculate the Fermi velocity around K-point, which is found to be 9.1 × 105 m/s. |
| Group of Knowledge | : | Fisika |
| Original Language | : | English |
| Level | : | Nasional |
| Status | : |
Published
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Biaxial strain effects on the electronic properties of silicene_ the density-functional-theory-based calculations.pdf
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