ACADSTAFF UGM

CREATION
Title : Defect-induced large spin-orbit splitting in monolayer PtSe2
Author :

Moh. Adhib Ulil Absor, S.Si., M.Sc., Ph.D. (1) Dr. Iman Santoso, S.Si., M.Sc. (2) Prof. Dr. Harsojo, SU., M.Sc. (3) Prof. Dr. Kamsul Abraha (4) Fumiyuki Ishii (5) Mineo Saito (6)

Date : 0 2017
Keyword : monolayer,spin-orbit monolayer,spin-orbit
Abstract : The effect of spin-orbit coupling on the electronic properties of monolayer (ML) PtSe2 is dictated by the presence of the crystal inversion symmetry to exhibit a spin-polarized band without the characteristic of spin splitting. Through fully relativistic density-functional theory calculations, we show that large spin-orbit splitting can be induced by introducing point defects. We calculate the stability of native point defects such as a Se vacancy (VSe), a Se interstitial (Sei), a Pt vacancy (VPt), and a Pt interstitial (Pti) and find that both the VSe and Sei have the lowest formation energy. We also find that, in contrast to the Sei case exhibiting spin degeneracy in the defect states, the large spin-orbit splitting up to 152 meV is observed in the defect states of the VSe. Our analyses of orbital contributions to the defect states show that the large spin splitting is originated from the strong hybridization between Pt-dx2+y2+dxy and Se-px+py orbitals. Our study clarifies that the defects play an important role in the spin-splitting properties of the PtSe2 ML, which is important for designing future spintronic devices.
Group of Knowledge : Fisika
Original Language : English
Level : Internasional
Status :
Published
Document
No Title Document Type Action
1 Absor_Santoso_Saito_PRB96_115128(2017)_Defect induced large spin orbit splitting in monolayer PtSe2.pdf
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2 Iman_Santoso_Jurnal_23_Absor_Santoso_Saito_PRB96_115128(2017)_Full Dokumen Lengkap.pdf
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3 Iman_Santoso_Jurnal_23_Absor_Santoso_Saito_PRB96_115128(2017)_Turnitin_similarity_check.pdf
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