ACADSTAFF UGM
| Title | : | Intrinsic persistent spin helix state in two-dimensional group-IV monochalcogenide monolayers ( or Ge and , Se, or Te) |
| Author | : |
Moh. Adhib Ulil Absor, S.Si., M.Sc., Ph.D. (1) |
| Date | : | 3 2019 |
| Keyword | : | Persistent Spin Helix,Group-IV Monochalcogenide Persistent Spin Helix,Group-IV Monochalcogenide |
| Abstract | : | Energy-saving spintronics are believed to be implementable on systems hosting the persistent spin helix (PSH) since they support an extraordinarily long spin lifetime of carriers. However, achieving the PSH requires a unidirectional spin configuration in the momentum space, which is practically nontrivial due to the stringent conditions for fine-tuning the Rashba and Dresselhaus spin-orbit couplings. Here, we predict that the PSH can be intrinsically achieved on a two-dimensional (2D) group-IV monochalcogenide MX monolayer, a new class of the noncentrosymmetric 2D materials having in-plane ferroelectricity. Due to the C2v point-group symmetry in the MX monolayer, a unidirectional spin configuration is preserved in the out-of-plane direction and thus maintains the PSH that is similar to the [110] Dresselhaus model in the [110]-oriented quantum well. Our first-principle calculations on various MX (M= Sn, Ge; X= S, Se, Te) monolayers confirmed that such typical spin configuration is observed, in particular, at near the valence-band maximum where a sizable spin splitting and a substantially small wavelength of the spin polarization are achieved. Importantly, we observe reversible out-of-plane spin orientation under opposite in-plane ferroelectric polarization, indicating that an electrically controllable PSH for spintronic applications is plausible. |
| Group of Knowledge | : | Fisika |
| Original Language | : | English |
| Level | : | Internasional |
| Status | : |
Published
|
| No | Title | Action |
|---|