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CREATION
Title : Significant structural distortion in the surface region of 4H-SiC induced by thermal oxidation and recovered by Ar annealing
Author :

Koji Kita (1) Adhi Dwi Hatmanto, S.Si., M.Sc., Ph.D. (2)

Date : 23 2018
Keyword : 4H-SiC, thermal oxidation, surface, annealing 4H-SiC, thermal oxidation, surface, annealing
Abstract : The impacts of O2-oxidation and Ar-annealing processes on the local lattice distortion at surface of thermally-oxidized 4H-SiC (0001) were investigated by using in-plane XRD. The surface oxidation induces a significant increase of the lattice constant, whereas Ar-annealing results in a gradual relaxation of it. From the x-ray penetration depth dependence of the observed lattice constant, those anomalous changes of lattice constants occur only in the surface region of SiC substrate.
Group of Knowledge :
Level : Internasional
Status :
Published
Document
No Title Document Type Action
1 ECS Trans_-2018-Kita-63-7 adhi.pdf
Document Type : Artikel dan Sertifikat/Bukti Kehadiran/Pasport (jika tidak ada sertifikat)
Artikel dan Sertifikat/Bukti Kehadiran/Pasport (jika tidak ada sertifikat) View