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| Title | : | Significant structural distortion in the surface region of 4H-SiC induced by thermal oxidation and recovered by Ar annealing |
| Author | : |
Koji Kita (1) Adhi Dwi Hatmanto, S.Si., M.Sc., Ph.D. (2) |
| Date | : | 23 2018 |
| Keyword | : | 4H-SiC, thermal oxidation, surface, annealing 4H-SiC, thermal oxidation, surface, annealing |
| Abstract | : | The impacts of O2-oxidation and Ar-annealing processes on the local lattice distortion at surface of thermally-oxidized 4H-SiC (0001) were investigated by using in-plane XRD. The surface oxidation induces a significant increase of the lattice constant, whereas Ar-annealing results in a gradual relaxation of it. From the x-ray penetration depth dependence of the observed lattice constant, those anomalous changes of lattice constants occur only in the surface region of SiC substrate. |
| Group of Knowledge | : | |
| Level | : | Internasional |
| Status | : |
Published
|
| No | Title | Action |
|---|---|---|
| 1 |
ECS Trans_-2018-Kita-63-7 adhi.pdf
Document Type : Artikel dan Sertifikat/Bukti Kehadiran/Pasport (jika tidak ada sertifikat)
|
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