ACADSTAFF UGM
| Title | : | Similarity and difference of the impact of ion implantation and thermal oxidation on the lattice structure of 4H-SiC (0001) surface |
| Author | : |
Adhi Dwi Hatmanto, S.Si., M.Sc., Ph.D. (1) Koji Kita (2) |
| Date | : | 23 2019 |
| Keyword | : | ion implantation,thermal oxidation,lattice distortion,4H-SiC ion implantation,thermal oxidation,lattice distortion,4H-SiC |
| Abstract | : | We investigated the similarities and differences of the impacts of ion implantation and thermal oxidation on the lattice structure of 4H-SiC (0001) surface. Our results showed that both Ar-/O-ion implantations and thermal oxidation induce significant distortion at the 4H-SiC surface. The oxygen-implanted sample resulted in a significant increase of distortion after short-time annealing, indicating the distortion is enhanced by the existence of oxygen. A clear difference of the kinetics of lattice relaxations between Ar-implanted and thermally oxidized 4H-SiC indicates that the distortion introduction mechanism by invading oxygen into the SiC surface is different from the one by Frenkel pairs formation by ion implantations. |
| Group of Knowledge | : | Teknik Material (Ilmu Bahan) |
| Original Language | : | English |
| Level | : | Internasional |
| Status | : |
Published
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