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Title : Strong Rashba effect in the localized impurity states of halogen-doped monolayer PtSe 2
Author :

Moh. Adhib Ulil Absor, S.Si., M.Sc., Ph.D. (1) Dr. Iman Santoso, S.Si., M.Sc. (2) Prof. Dr. Harsojo, SU., M.Sc. (3) Prof. Dr. Kamsul Abraha (4) Hiroki Kotaka (5) Fumiyuki Ishii (6) Mineo Saito (7)
Date : 2018
Keyword : - -
Abstract : The recent epitaxial growth of the 1T phase of the PtSe2 monolayer (ML) has opened the possibility for novel applications, in particular for a spintronics device. However, in contrast to the 2H phase of transition-metal dichalcogenides (TMDs), the absence of spin splitting in the PtSe2 ML may limit the functionality for spintronics application. Through fully relativistic density-functional theory calculations, we show that large spin splitting can be induced in the PtSe2 ML by introducing a substitutional halogen impurity. Depending on the atomic number Z of the halogen dopants, we observe an enhancement of the spin splitting in the localized impurity states (LIS), which is due to the increased contribution of the p-d orbital coupling. More importantly, we identify very large Rashba splitting in the LIS near the Fermi level around the point characterized by hexagonal warping of the Fermi surface. We show that the Rashba splitting can be controlled by adjusting the doping concentration. Therefore, this work provides a possible way to induce significant Rashba splitting in the two-dimensional TMDs, which is useful for spintronic devices operating at room temperature.
Group of Knowledge : Fisika
Original Language : English
Level : Internasional
Status :
Published
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1 PRB_adhib2018.pdf
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2 PRB_adhib2018.pdf
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3 Absor_Santoso_PRB97_205138(2018)_Strong Rashba Effect in the localized impurity states of Halogen doped PtSe2.pdf
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4 Iman_Santoso_Jurnal_20_Absor_Santoso_PRB97_205138(2018)_Full Dokumen Lengkap.pdf
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5 Iman_Santoso_Jurnal_20_Absor_Santoso_PRB97_205138(2018)_Turnitin_similarity_check.pdf
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6 CS- Strong Rashba effect in the localized impurity states of halogen-doped monolayer PtSe 2 (1).pdf
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