ACADSTAFF UGM
| Title | : | The kinetics of lattice distortion introduction and lattice relaxation at the surface of thermally-oxidized 4H-SiC (0001) |
| Author | : |
Adhi Dwi Hatmanto, S.Si., M.Sc., Ph.D. (1) Koji Kita (2) |
| Date | : | 1 2019 |
| Keyword | : | lattice distortion, kinetics,activation energy,lattice relaxation lattice distortion, kinetics,activation energy,lattice relaxation |
| Abstract | : | The kinetics of lattice distortion introduction and lattice relaxation at the surface of thermally-oxidized 4H-SiC (0001) were investigated. Our results suggested that lattice distortion introduction and lattice relaxation seem to follow zeroth and second order rate laws, respectively. The obtained activation energy of ~3.9 eV for lattice distortion introduction and ~1 eV for its relaxation indicate that the lattice distortion is determined by a bond rearrangement or movement process with a relatively low activation energy. Furthermore, the formation of byproducts which remain at the surface region of 4H-SiC was predicted to be a possible origin of the significant lattice distortion. |
| Group of Knowledge | : | Teknik Material (Ilmu Bahan) |
| Original Language | : | English |
| Level | : | Internasional |
| Status | : |
Published
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